吸光區累崩區分離的累崩光二極體

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莊文榮(Wen-Jung Chuang ) 查詢紙本館藏

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論文名稱

吸光區累崩區分離的累崩光二極體
(Separated Absorption Multiplication Avalanche Photodiode)

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摘要(中)

本論文分為兩個主要部份。首先，設計一個與一般雙載子接面電晶體製程相容的非晶矽/單晶矽質吸光區累崩區分離的累崩光二極體(SAM-APD)，並且利用半導體製程模擬軟體MEDICI與TSUPREM-4，計算元件特性和製程參數。最後將模擬結果實際應用於元件製程上，並完成元件的製作。
另一完成的研究主題是分別在非晶質超晶格結構(superlattice)中，加入p-i-a-SiC、p-i-n-a-SiC或p-i(a-SiC)-i-n(a-Si)非晶質複層的非晶質吸光區累崩區分離的超晶格累崩光二極體(SAM-SAPD)。這些元件都有相當高的光增益(optical gain)，其中加入p-i(a-SiC)-i-n(a-Si)非晶質薄膜的元件具有最高的光增益。實驗結果顯示，利用在累增區中加入高電場及傳導帶不連續等區域所完成的元件具有較佳的光電特性。

摘要(英)

First, a BJT compatible process were used to fabricate an amorphous/crystalline Si separated absorption multiplication avalanche photodiode (SAM-APD) in this study. The performance and process parameters of the designed SAM-APD were simulated by using the MEDICI and TSUPREM-4. Eight levels of mask were needed to fabricate the device and the finished devices had rather poor characteristics, such as low optical gain and photocurrent, due to process complexity. Further efforts in device processings are needed to verify the performances of designed SAM-APD.
Then three kinds of amorphous separated absorption multiplication superlattice avalamche photodiode (SAM-SAPD), each with additional p-n-a-SiC, p-i-n-a-SiC, or p-i(a-SiC)-i-n(a-Si) amorphous layers in substage of superlattice (SL), had been designed and fabricated successfully. These device had rather high optical gain, and the one with additional p-i(a-SiC)-i-n(a-Si) amorphous layers in substage of SL had the highest optical gain. The results of this study indicated that using high electric-field and conduction band-edge discontinuity in multiplication region of SAM-SAPD would improve its performance.

關鍵字(中)

★ 光二極體
★ 分離
★ 累崩
★ 超晶格結構
★ 非晶質

關鍵字(英)

★ amorphous
★ avalanche
★ photodiode
★ separate
★ superlattice

論文目次

Abstract ................................................ I
Table Captions ............................................... IV
Figure Captions ............................................... V
Chapter 1 Introduction ...............................................1
Chapter 2 Amorphous Silicon/Crystalline Silicon Separated
Absorption Multiplication Avalanche Photodiode (SAMAPD) ......................................3
2.1 Theory of Device Operation ...............3
2.2 Fabrication Process ................. 8
2.2.1 Design Considerations ...............8
2.2.2 Fabrication Processes ................9
2.3 Simulation .................25
2.4 Measurement Techniques .................32
2.4.1 Optical Band-gap .................32
2.4.2 Responsivity .................32
2.5 Experimental Results .................36
Chapter 3 Amorphous Separated Absorption Multiplication
Superlattice Avalanche Photodiode (SAM-SAPD).....40
3.1 Theory and Device Operation .................40
3.2 Fabrication Processes .................44
3.2.1 Design Considerations .................44
3.2.2 Fabrication Processes .................44
3.3 Experimental Results .................52
Chapter 4 Conclusions .................58
References .................59
Table Captions
Table 2-1 A list of the eight masks used to fabricate the SAM-APD. 12
Table 2-2 Specifications of the SAM-APD. .................17
Table 2-3 Deposition conditions and Eopt’s of various amorphous films.
Table 2-4 The deposition conditions of metal films .........24
Table 3-1 Deposition conditions and Eopt’s of various amorphous films. .................51
Figure Captions
Fig. 2-1The schematic cross-section of a SAM-APD ............6
Fig. 2-2Schematic energy-band diagram of a SAM-APD under
reverse-bias.........................................7
Fig. 2-3The process flow-chart of a SAM-APD................15
Fig. 2-4The PECVD system for depositing amorphous film.....................................................16
Fig. 2-5The annealing and drive-in conditions of the Buried layer.....................................................18
Fig. 2-6The annealing and drive-in conditions of the Down-ISO
regions............................................19
Fig. 2-7The annealing and drive-in conditions of the Top-ISO
regions............................................20
Fig. 2-8The annealing and drive-in conditions of the N+-regions.....................................................21
Fig. 2-9The annealing and drive-in conditions of the P+-regions.....................................................22
Fig. 2-10(a) The potential contours of the SAM-APD device, and....................................................27
(b) the total current vectors of the SAM-APD device.....................................................27
Fig. 2-11(a) The p+-region doping profiles and junction depths for various implanted doses, and
(b) the device current densities versus reverse-biasd voltage for various doses of P+-region..........................28
Fig. 2-12The device current densities versus reverse-biasd voltage for various depths of P+-region......................29
Fig. 2-13All of the doping concentration profiles for the device.....................................................29
Fig. 2-14(a) The incident light pulse, and...............30
(b) the device transient output photo-current.....................................................30
Fig. 2-15The normalized device gain versus frequency of incident light pulse.........................................31
Fig. 2-16The setup of UV/VIS/NIR spectrophotometer for measuring optical band-gap of amorphous film..........34
Fig. 2-17The setup for measuring device responsivity.......35
Fig. 2-18(a) The photo and dark I-V curves of Device 1 under
reverse-bias, and
(b) the optical gain of Device 1................37
Fig. 2-19(a) The photo and dark I-V curves of Device 2 under
reverse-bias, and
(b) the optical gain of Device 2................38
Fig. 2-18(a) The photo and dark I-V curves of Device 3 under
reverse-bias, and
(b) the optical gain of Device 3................39
Fig. 3-1The schematic cross-section of an amorphous SAM-SAPD
[24]...........................................42
Fig. 3-2Schematic energy-band diagram of an amorphous SAM-SAPD
under reverse-bias [24].........................43
Fig. 3-3The schematic cross-section along with the gas flow-rates for
the amorphous SAM-SAPD with additional p-n amorphous
layers in substage of SL (Device A)................47
Fig. 3-4The schematic cross-section along with the gas flow-rates for
the amorphous SAM-SAPD with additional p-i-n amorphous
layers in substage of SL (Device B)................48
Fig. 3-5The schematic cross-section along with the gas flow-rates for
the amorphous SAM-SAPD with additional p-i-i-n amorphous
layers in substage of SL (Device C)................49
Fig. 3-6Variations of optical gap of i-a- SiC:H with used carbon
hydride gas fractions (C/(C+Si)) in C2H2-SiH4,
C2H4-SiH4 and CH4-SiH4 gas mixtures [25].......50
Fig. 3-7(a) The photo and dark I-V curves of Device A under
reverse-bias, and
(b) the optical gain of Device A.................53
Fig. 3-8(a) The photo and dark I-V curves of Device B under
reverse-bias, and
(b) the optical gain of Device B.................54
Fig. 3-9(a) The photo and dark I-V curves of Device C under
reverse-bias, and
(b) the optical gain of Device C.................55
Fig. 3-10(a) The photo and dark I-V curves of Device D under
reverse-bias, and
(b) the optical gain of Device D.................56
Fig. 3-11A comparison of the optical gains for various amorphous
SAM-SAPDs...........................................57

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指導教授

洪志旺(Jyh-Wong Hong)

審核日期

2001-7-9

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